NOT RECOMMENDED FOR NEW DESIGN
USE DMN3025LSS
DMN3052LSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
R DS(ON) max
30m ? @ V GS = 10V
I D max
T A = +25°C
7.1A
?
?
?
?
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
?
Low Input/Output Leakage
30V
40m ? @ V GS = 4.5V
63m ? @ V GS = 2.5V
6.2A
4.9A
?
?
?
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This MOSFET has been designed to minimize the on-state
resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
?
?
?
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
?
?
?
Backlighting
Power Management Functions
DC-DC Converters
?
?
?
Terminal Connections Indicator: See diagram
Terminals: Finish ? Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
D
SO-8
S
S
D
D
TOP VIEW
Ordering Information
Part Number
DMN3052LSS-13
(Note 4)
S
G
Top View
Internal Schematic
Case
SO-8
D
D
G
S
Equivalent circuit
Packaging
2500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. ?
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
= Manufacturer’s Marking
N3052LS = Product Type Marking Code
YYWW = Date Code Marking
N3052LS
YY WW
N3052LS
YY WW
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1
4
1
4
Chengdu A/T Site
Shanghai A/T Site
DMN3052LSS
Document number: DS31583 Rev. 5 - 3
1 of 6
www.diodes.com
December 2013
? Diodes Incorporated
相关PDF资料
DMN3110S-7 MOSFET N-CH 30V 2.5A SOT-23
DMN3112S-7 MOSFET N-CH 30V 5.8A SOT23-3
DMN3112SSS-13 MOSFET N-CH 30V 6A 8SOP
DMN3115UDM-7 MOSFET N-CH 30V 3.2A SOT-26
DMN3135LVT-7 MOSFET N CH 30V 4.1A TSOT26
DMN3150L-7 MOSFET N-CH 28V 3.2A SOT23-3
DMN3150LW-7 MOSFET N-CH 28V 1.6A SC70-3
DMN3200U-7 MOSFET N-CH 30V 2.2A SOT23-3
相关代理商/技术参数
DMN3070SSN-7 制造商:Diodes Incorporated 功能描述:MOSFET N CH 30V 4.2A, SC59 制造商:Diodes Incorporated 功能描述:30V N-CH MOSFET
DMN3110S 制造商:Diodes Incorporated 功能描述:MOSFET N CH 30V 3.3A SOT23 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 30V, 3.3A, SOT23 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 30V, 3.3A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.054ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:740mW; No. of Pins:3 ;RoHS Compliant: Yes
DMN3110S-7 功能描述:MOSFET MOSFET BVDSS: 25V-30 SOT23,3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3112S 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3112S-7 功能描述:MOSFET 1.4W 30V 5.8A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3112SQ-7 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET Low Input Capacitance
DMN3112SSS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3112SSS-13 功能描述:MOSFET SINGLE N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube